Irradiation-induced metal-insulator transition in monolayer graphene

  Erez Zion  ,  Alex butenko  ,  Yuri Kaganovskii  ,  Vladimir Richter  ,  Amos Sharoni  ,  Eugene Kogan  ,  Moshe Kaveh  ,  Issai Shlimak  
Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Institute of Nanotechnology and Advanced Materials Bar Ilan University, Ramat Gan 52900, Israel

A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR.