Growth of the Transparent Correlated Metal SrVO3

  Lishai Shoham  ,  Maria Baskin  ,  Myung-Geun Han  ,  Yimei Zhu  ,  Lior Kornblum  
Andrew and Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology
Condensed Matter Physics and Materials Science, Brookhaven National Laboratory

The ongoing search for earth-abundant transparent conduction oxides (TCOs) highlighted the correlated metal SrVO3 as a potential candidate. SrVO3 exhibits high conductivity and transparency in the visible. Moreover, SrVO3 is an attractive candidate for future electronics. A major challenge in the synthesis of high quality SrVO3 is to mitigate the formation of defects in the film. These defects can cause electron scattering which results in resistivity increase and it obscures some of the interesting physics. Film growth was done with molecular beam epitaxy (MBE), providing a scalable fabrication process. In this work we present low defect SrVO3 films with residual resistivity ratios exceeding 10 and room temperature resistivities in the order of 30 µΩ·cm. The analysis of the structural and electronic properties of the SrVO3 films paves the way towards further improvement of their quality and their implementation as TCO in optoelectronics, and provides a route towards studies of their electron correlation in clean systems.

This work was funded by the Israeli Science Foundation (ISF Grant 375/17).